IRVINE, Calif., March 17, 2011 (GLOBE NEWSWIRE) -- Microsemi Corporation(Nasdaq:MSCC), a leading provider of semiconductor technology aimed at building a smart, secure, connected world, today announced the development of enhancement mode Gallium Nitride field-effect transistors (FETs) for satellites and other military power conversion, point-of-load, and high speed switching applications.
The FETs are built on a wide band gap material, which increases performance over current radiation-hardened silicon MOSFETs. FETs provide the following features and benefits:
- Extremely low parasitic capacitance which reduces switching losses by at least 50 percent resulting in higher efficiency circuits
- Lower on-resistance to minimize conduction losses resulting in circuit efficiency gains
- Excellent radiation performance
Microsemi is working with Efficient Power Conversion (EPC) in the development of a complete line of high performance FETS for high reliability space and military applications. The first new devices will be offered by Microsemi in voltages of 40V, 60V, 100V, 150V, and 200V and will have Drain-to-Source on-resistance values of 4 milli-ohms to 100 milli-ohms. Additionally, the devices are expected to deliver excellent high temperature performance with junction temperatures approaching 300 °C. A family of standard through-hole and surface-mount packages in addition to flip chip die will be available.
Preliminary radiation testing of the devices has shown high Single Event Effect (SEE) and Total Ionizing Dose (TID) capability. This allows the devices to operate in high orbit and deep space missions without degradation to performance. Microsemi will work closely with the Defense Logistics Agency (DLA) to define the test specifications within standard military drawings (MIL-PRF-19500 slashsheets), assuring customers of the performance capabilities of these products.
A jointly researched paper entitled "Enhancement Mode Gallium Nitride Characteristics Under Long Term Stress" will be presented at the Government Microcircuit Applications and Critical Technology Conference (GOMAC), March 21-24, 2011 in Orlando, Florida. The study covers the reliability testing results and demonstrates the stability of the devices at temperature and under radiation exposure.
Prototype customer samples are expected to be available by mid-2011 with production quantities by November 2011. A full description of these devices and technical datasheets are available by contacting Al Ortega at email@example.com, or by calling (508) 365-7874, your local Microsemi sales representative.
Microsemi Corporation (Nasdaq:MSCC) offers the industry's most comprehensive portfolio of semiconductor technology. Committed to solving the most critical system challenges, Microsemi's products include high-performance, high-reliability analog and RF devices, mixed signal integrated circuits, FPGAs and customizable SoCs, and complete subsystems. Microsemi serves leading system manufacturers around the world in the defense, security, aerospace, enterprise, commercial, and industrial markets. Learn more at .
The Microsemi Corporation logo is available at http://www.globenewswire.com/newsroom/prs/?pkgid=1233
EPC is the leader in enhancement mode Gallium Nitride based power management devices. EPC is the first to introduce enhancement-mode Gallium-Nitride-on-Silicon transistors as power MOSFET replacements in applications such as servers, netbooks, notebooks, LED lighting, cell phones, base stations, flat-panel displays, and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs. Learn more at .
All trademarks are the property of Microsemi Corporation.
"Safe Harbor" Statement under the Private Securities Litigation Reform Act of 1995: Any statements set forth in this news release that are not entirely historical and factual in nature, including without limitation statements related to the development of enhancement mode Gallium Nitride field-effect transistors (FETs) for satellites and other military power conversion, point-of-load, and high speed switching applications, and its potential effects on future business, are forward-looking statements. These forward-looking statements are based on our current expectations and are inherently subject to risks and uncertainties that could cause actual results to differ materially from those expressed in the forward-looking statements. The potential risks and uncertainties include, but are not limited to, such factors as rapidly changing technology and product obsolescence, potential cost increases, variations in customer order preferences, weakness or competitive pricing environment of the marketplace, uncertain demand for and acceptance of the company's products, adverse circumstances in any of our end markets, results of in-process or planned development or marketing and promotional campaigns, difficulties foreseeing future demand, potential non-realization of expected orders or non-realization of backlog, product returns, product liability, and other potential unexpected business and economic conditions or adverse changes in current or expected industry conditions, difficulties and costs of protecting patents and other proprietary rights, inventory obsolescence and difficulties regarding customer qualification of products. In addition to these factors and any other factors mentioned elsewhere in this news release, the reader should refer as well to the factors, uncertainties or risks identified in the company's most recent Form 10-K and all subsequent Form 10-Q reports filed by Microsemi with the SEC. Additional risk factors may be identified from time to time in Microsemi's future filings. The forward-looking statements included in this release speak only as of the date hereof, and Microsemi does not undertake any obligation to update these forward-looking statements to reflect subsequent events or circumstances.
CONTACT: FINANCIAL CONTACT: John W. Hohener Executive Vice President and CFO Tel: (949) 221-7100 EDITORIAL CONTACT: Ivanya Terrazas Public Relations Tel: (650) 318-7570 firstname.lastname@example.org