updated 8/30/2010 7:45:50 AM ET 2010-08-30T11:45:50

ANDOVER, Mass., Aug. 27, 2010 (GLOBE NEWSWIRE) -- SiGe Semiconductor, Inc., a leading supplier of silicon-based radio frequency (RF) power amplifiers (PAs) and front end modules (FEMs), has further expanded its series of power amplifiers with the release of the SE7271T. A single high-power PA which can cover both 2.3-2.4 GHz and 2.5-2.7 GHz WiMAX bands, the device reduces bill of materials (BoM) count and cost for USB dongles, data cards, mobile Internet devices and WiMAX-enabled handsets.

A photo accompanying this release is available at http://www.globenewswire.com/newsroom/prs/?pkgid=7924

Commenting on the device, Sanjiv Shah, Marketing Director for WiMAX Products at SiGe, said, "Our proven system knowledge and device integration has enabled us to deliver this compact, small footprint PA with unequalled power added efficiency." He added, "WiMAX ultimately stands for freedom and mobility. With the SE7271T's low current consumption, we are delivering the battery life that consumers have come to expect in mobile devices."

The new, highly integrated single-die PA is fully matched with a step attenuator, power detector and harmonic filter all in a 3mm x 3mm x 0.6mm Quad Flat No Lead (QFN) package. The integrated impedance match combines with the product's functionality to create a "plug-and-play" solution that both simplifies the design of mobile WiMAX products and improves their manufacturability. The lower current consumption and higher efficiency of the SE7271T reduce current draw and leads to improved battery life in WiMAX-enabled handsets, mobile Internet devices and laptops. PA current consumption is critical in USB dongles, where the limits on available power supply current typically force reductions in the RF output power of less-efficient PAs, reducing network coverage and data rate.

Shah commented, "Our competitors struggle with delivering to customers the key value points for the evolution of mobile WiMAX products. Competitive products are physically larger or are not compliant with the temperature range required for data cards and USB dongles. And some don't cover the complete 2.5 GHz WiMAX band. Full 2.3-2.7 GHz coverage, increased efficiency at high RF power levels, -40 to +85 degree Celsius operating temperature range, reduced package height -- these are critical performance areas for mobile WiMAX PAs. The SE7271T delivers on all of them."

According to Dell'OroGroup, a leading provider of market information about the networking and telecommunications industries, WiMAX subscribers are expected to rise from 7 million in 2009 to 69 million by 2013.

"Whether using wired or wireless networks, today's consumers expect broadband speed and performance. WiMAX is the next-generation standard for delivering wireless high-bandwidth connectivity in fixed and mobile environments, and our radiofrequency PAs and FEMs deliver the reliability, flexibility, and performance OEMs require and WiMAX consumers demand." Shah concluded, "The SE7271T provides our customers with an integrated solution for their designs. The reduced design time it supports, with the smallest footprint for its functionality as well as the reduction of the number of components required and cost, all make it a device of choice for USB dongles, data cards, mobile Internet devices and WiMAX-enabled handsets."

The SE7271T comes in a small lead and halogen free, RoHS-compliant, 3mm x 3mm x 0.6mm QFN package.

Pricing and availability: The SE7271T is priced at US$2.22 in quantities of 10,000 units. It is in production now and is offered with product and evaluation board datasheets and extensive application notes surrounding the use and implementation of the device.

SiGe's renowned customer support is readily available to assist customers in designing, upgrading or retrofiting the SE7271T into their application designs to optimize performance.

Please contact SiGe for an up-to-date list of reference designs using the SE7271T.

About SiGe Semiconductor

SiGe Semiconductor is a leading provider of highly integrated RF semiconductor front end solutions that enable wireless connectivity across a wide range of applications. Our innovative solutions integrate multiple RF functions into a single semiconductor device to deliver an optimal combination of performance, power output and efficiency, and size. Our predominant use of standard silicon based processes and fabless manufacturing model enables us to achieve high levels of functional integration, leverage the economies of scale of high volume manufacturing technology, maintain low costs and accelerate our time-to-market. We have shipped more than 500 million front end solutions since our inception, primarily consisting of Wi-Fi™ front end modules and power amplifiers.

About SiGe Semiconductor's Lead-Free Initiative

The use of lead in the design and manufacture of electronic products is an increasing environmental concern. In support of industry-wide initiatives to protect the environment, all SiGe Semiconductor, Inc. products we ship today are lead-free and RoHS compliant.

This news release may contain certain forward-looking statements. All statements, other than statements of historical fact, included herein are forward-looking statements that involve various risks and uncertainties. There can be no assurance that such statements will prove to be accurate and actual results and future events could differ materially from those anticipated in such statements. Forward-looking statements are based on the estimates and opinions of management on the date the statements are made, and SiGe Semiconductor, Inc. does not undertake an obligation to update forward-looking statements should conditions or management's estimates or opinions change.

enabling wireless multimedia®

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